Dr. E. Fred Schubert
Rensselaer Polytechnic Institute

Innovations in Light Emitting Diodes for Solid-State and Smart Lighting Applications

Biography:

E. Fred Schubert received his Ph. D. in Electrical Engineering from the University of Stuttgart (Germany) in 1986. From 1981 to 1985 he worked on compound semiconductor crystal growth at the Max Planck Institute for Solid State Research, Stuttgart, as a Member of Scientific Staff. During 1985 to 1995, he was a Post-doctoral Fellow, Member of Technical Staff, and Principal Investigator at AT&T Bell Laboratories in Holmdel and Murray Hill, New Jersey. In 1995, he joined Boston University as a Professor of Electrical Engineering. He joined Rensselaer Polytechnic Institute in 2002 where he is the Wellfleet Senior Constellation Professor of the Future Chips Constellation with appointments in the Electrical Engineering Department and in the Physics Department.

Dr. Schubert has made pioneering contributions to the field of compound semiconductor materials and devices in particular to the fields of alloy broadening, delta-doping, resonant-cavity light-emitting diodes, enhanced spontaneous emission in Er-doped Si/SiO2 microcavities, elimination of unipolar heterojunction band discontinuities, p-type superlattice doping in AlGaN, polarization-enhanced ohmic contacts, omni-directional reflectors, light-emitting diodes, and solid-state lighting.

He is inventor or co-inventor of 28 issued US patents and has authored and co-authored more than 200 publications. He authored the book Doping in III–V Semiconductors (1993), Delta Doping in Semiconductors (1996), and Light-Emitting Diodes (2003). He is a Fellow of the APS, IEEE, OSA, and SPIE. He received the Alexander von Humboldt Senior Research Award, Discover Award, R&D 100 Award, Boston University Provost Innovation Fund Award, and VDE Literature Award for the book Doping in III–V Semiconductors.